L6390_12 STMICROELECTRONICS [STMicroelectronics], L6390_12 Datasheet
L6390_12
Related parts for L6390_12
L6390_12 Summary of contents
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Features ■ High-voltage rail up to 600 V ■ dV/dt immunity ±50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source – 430 mA sink ■ Switching times 75/35 nsec rise/fall with 1 nF load ■ ...
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Contents Contents 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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L6390 1 Block diagram Figure 1. Block diagram 4 VCC UV DETECTION 3 HIN 5V 1 LIN 2 SD/OD 8 GND OPOUT BOOTSTRAP DRIVER FLOATING STRUCTURE from LVG DETECTION LEVEL SHIFTER LOGIC SHOOT THROUGH PREVENTION SD LATCH ...
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Pin connection 2 Pin connection Figure 2. Pin connection (top view) Table 2. Pin description Pin n # Pin name 1 2 SD/ OPOUT LVG 12 HVG 16 ...
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L6390 3 Truth table Table 3. Truth table Note: X: don't care. Input LIN HIN Doc ID 14493 Rev 7 Truth table Output LVG ...
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Electrical data 4 Electrical data 4.1 Absolute maximum ratings Table 4. Absolute maximum ratings Symbol V Supply voltage cc V Output voltage out V Bootstrap voltage boot V High-side gate output voltage hvg V Low-side gate output voltage lvg V ...
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L6390 4.3 Recommended operating conditions Table 6. Recommended operating conditions Symbol Pin (1) V 16- out boot out 2. LVG off. Vcc = ...
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Electrical characteristics 5 Electrical characteristics 5.1 AC operation Table 7. AC operation electrical characteristics (V Symbol Pin Parameter High/low-side driver turn- propagation delay 1 vs vs. 15 High/low-side driver turn-off t off propagation delay 2 vs. ...
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L6390 Figure 3. Timing H VG LVG/H VG Figure 4. Typical deadtime vs. DT resistor value 50% LIN tr 90% 10% LVG ton 50% HIN tr 90% 10% ton 50% SD 90% tsd Doc ID 14493 Rev 7 Electrical characteristics ...
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Electrical characteristics 5.2 DC operation Table 8. DC operation electrical characteristics (V Symbol Pin Parameter Low supply voltage section hysteresis cc_hys turn-ON threshold cc_thON turn-OFF threshold cc_thOFF cc Undervoltage ...
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L6390 Table 8. DC operation electrical characteristics (V Symbol Pin Parameter Logic inputs Low level logic threshold V il voltage High level logic threshold V ih voltage Single input voltage il_S HIN logic “1” ...
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Electrical characteristics Table 9. Op amp characteristics Symbol Pin Parameter V Input offset voltage io I Input offset current Input bias current ib Input common mode voltage V icm range V Output voltage swing OPOUT 7 ...
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L6390 6 Waveforms definition Figure 5. Deadtime and interlocking waveforms definition CONTROL SIGNAL EDGES OVERLAPPED: INTERLOCKING + DEAD TIME CONTROL SIGNALS EDGES SYNCHRONOUS (*): DEAD TIME CONTROL SIGNALS EDGES NOT OVERLAPPED, BUT INSIDE THE DEAD TIME: DEAD TIME CONTROL SIGNALS ...
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Smart shutdown function 7 Smart shutdown function The L6390 integrates a comparator committed to the fault sensing function. The comparator has an internal voltage reference V inverting input is available on pin 10. The comparator input can be connected to ...
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L6390 In common overcurrent protection architectures the comparator output is usually connected to the SD input and an RC network is connected to this SD/OD line in order to provide a mono-stable circuit, which implements a protection time that follows ...
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Smart shutdown function Figure 8. SD level shifting example circuit µC VDD VDD GND 16/26 HIN L6390 LIN VCC + + VCC GND - VCC DT R1 9*R SD/ SD_force R OPOUT R3 2*R SD_sense C1: disable time ...
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L6390 8 Typical application diagram Figure 9. Application diagram VCC + V CC FROM CONTROLLER HIN FROM CONTROLLER LIN V BIAS FROM/TO CONTROLLER SD/OD GND DT OPOUT TO ADC BOOTSTRAP DRIVER FLOATING STRUCTURE 4 from LVG UV DETECTION DETECTION 3 ...
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Bootstrap driver 9 Bootstrap driver A bootstrap circuitry is needed to supply the high-voltage section. This function is normally accomplished by a high-voltage fast recovery diode integrated structure replaces the external diode realized by a high-voltage DMOS, driven ...
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L6390 where Q is the gate charge of the external Power MOSFET, R gate the bootstrap DMOS and T For example: using a Power MOSFET with a total gate charge of 30 nC, the drop on the bootstrap DMOS is ...
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Package mechanical data 10 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...
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L6390 Figure 11. DIP-16 package dimensions Doc ID 14493 Rev 7 Package mechanical data 21/26 ...
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Package mechanical data Table 12. SO-16 narrow mechanical data Dim ccc 22/26 mm Min. Typ. 0.10 1.25 0.31 0.17 9.80 9.90 5.80 6.00 3.80 3.90 1.27 0.25 0.40 ...
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L6390 Figure 12. SO-16 narrow package dimensions Doc ID 14493 Rev 7 Package mechanical data 0016020_F 23/26 ...
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Package mechanical data Figure 13. SO-16 narrow footprint 24/26 Doc ID 14493 Rev 7 L6390 ...
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L6390 11 Revision history Table 13. Document revision history Date 29-Feb-2008 09-Jul-2008 17-Sep-2008 17-Feb-2009 11-Aug-2010 10-Jul-2012 25-Jul-2012 Revision 1 First release Updated: Cover page, 2 Section 4 on page 6, 3 Updated test condition values on Updated Table 7 on ...
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...