ZXMS6006SGTA DIODES [Diodes Incorporated], ZXMS6006SGTA Datasheet - Page 6

• Manufacturer Part Number: ZXMS6006SGTA
• Description: 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
• Manufacturer: DIODES [Diodes Incorporated]

Typical Characteristics
ZXMS6006SG
Document number: DS35141 Rev. 1 - 2
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
0.20
0.15
0.10
0.05
0.00
0.20
0.15
0.10
0.05
0.00
16
14
12
10
On-Resistance vs Temperature
8
6
4
2
0
Typical Output Characteristic
2.0
On-Resistance vs Input Voltage
0
-50
1
-25
V
T
2.5
J
2
DS
Junction Temperature (°C)
V
3
Drain-Source Voltage (V)
0
IN
3.0
4
Input Voltage (V)
V
25
IN
T
5
= 3V
A
= 25°C
3.5
6
50
T
7
J
T
= 150°C
75
J
4.0
= 25°C
V
8
IN
I
D
= 5V
100 125 150
= 1A
9 10 11 12
4.5
www.diodes.com
V
5V
4.5V
4V
3.5V
3V
2.5V
IN
2V
3V
5.0
6 of 9
0.01
120
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
Threshold Voltage vs Temperature
80
60
40
20
10
Input Current vs Input Voltage
0
1
Reverse Diode Characteristic
0
-50
-25
0.4
T
V
T
J
J
SD
=150°C
1
Junction Temperature (°C)
V
Source-Drain Voltage (V)
IN
0
Input Voltage (V)
25
2
0.6
Diodes Incorporated
50
A Product Line of
3
75
0.8
T
100 125 150
V
I
D
J
IN
=25°C
= 1mA
4
= V
ZXMS6006SG
DS
1.0
5
© Diodes Incorporated
December 2010