IPS1225-40A IPS [IP SEMICONDUCTOR CO., LTD.], IPS1225-40A Datasheet - Page 2

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IPS1225-40A

Manufacturer Part Number
IPS1225-40A
Description
silicon controlled rectifiers
Manufacturer
IPS [IP SEMICONDUCTOR CO., LTD.]
Datasheet
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
THERMAL RESISTANCES
STATIC CHARACTERISTICS
Symbol
I
Symbol
DRM /
Symbol
R
dV/dt
V
V
I
th
GT
I
I
GT
GD
V
L
H
(j – c)
TM
I
RRM
Required DC gate current to trigger at 25℃
Required DC voltage to trigger
(anode supply = 6V, resistive load) at - 40℃
DC gate voltage not to trigger
I
Holding current
V
G =
(
D
Tj = 125℃, V
= 67% V
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1.2 I
Junction to case for DC
I
TM
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
= 50A, tp = 380uS
GT
V
V
D
R
DRM
Test Conditions
= V
= V
Test Condition
DRM
Parameter
DRM
RRM
gate open Tj = 125 ℃
= rated value)
Tj = 125℃
Tj = 25℃
Tj = 25℃
TO-220A
at - 40℃
at 125℃
at 125℃
at 25℃
MAX
MAX
MAX
MAX
MAX
MIN
(MAX)
Value
Value
1.6
1.9
10
4
IPS1225-xxA
IPS1225-xxA
100
500
1.5
2.5
1.0
0.2
40
40
15
80
60
Unit
Unit
℃/W
mA
uA
V
Unit
V/us
mA
mA
mA
V
V
2

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