FDMS3572_07 FAIRCHILD [Fairchild Semiconductor], FDMS3572_07 Datasheet
FDMS3572_07
Manufacturer Part Number
FDMS3572_07
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDMS3572_07.pdf
(7 pages)
©2007 Fairchild Semiconductor Corporation
FDMS3572 Rev.C1
FDMS3572
N-Channel UltraFET Trench
80V, 22A, 16.5mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
θJC
θJA
Max r
Max r
Typ Qg = 28nC at V
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS3572
DS(on)
DS(on)
Pin 1
= 16.5mΩ at V
= 24mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
Power 56 (Bottom view)
= 10V
D
GS
GS
S
D
= 6V, I
= 10V, I
FDMS3572
-Continuous
-Continuous (Silicon limited)
-Pulsed
S
Device
D
D
= 8.4A
S
D
D
= 8.8A
G
T
A
= 25°C unless otherwise noted
Parameter
Power 56
Package
®
1
MOSFET
T
T
T
T
T
C
General Description
UItraFET
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.
Application
C
C
A
A
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
DC - DC Conversion
D
D
D
D
5
6
7
8
Reel Size
devices
13’’
DS(on)
(Note 1a)
(Note 1a)
(Note 1a)
, low ESR, low total and Miller gate charge,
combine
Tape Width
12mm
characteristics
-55 to +150
Ratings
4
3
2
1
±20
8.8
2.5
1.6
80
22
48
50
78
50
S
S
G
S
February 2007
www.fairchildsemi.com
3000 units
that
Quantity
Units
°C/W
enable
°C
W
V
V
A
tm
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FDMS3572_07 Summary of contents
Page 1
FDMS3572 N-Channel UltraFET Trench 80V, 22A, 16.5mΩ Features Max r = 16.5mΩ 10V, I DS(on) GS Max r = 24mΩ 6V, I DS(on) GS Typ Qg = 28nC 10V GS Low ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...
Page 3
Typical Characteristics 10V DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On Region Characteristics 2 8. ...
Page 4
Typical Characteristics 40V GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 125 0.01 0.1 ...
Page 5
Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 SINGLE PULSE 1E FDMS3572 Rev. 25°C unless otherwise noted RECTANGULAR ...
Page 6
FDMS3572 Rev.C1 6 www.fairchildsemi.com ...
Page 7
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ ...