FDMS86150 FAIRCHILD [Fairchild Semiconductor], FDMS86150 Datasheet - Page 4

• Manufacturer Part Number: FDMS86150
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2012 Fairchild Semiconductor Corporation
FDMS86150 Rev.C1
Typical Characteristics
0.01
100
300
100
0.1
0.1
10
10
10
1
1
0.01
0.01
8
6
4
2
0
Figure 7.
0
I
THIS AREA IS
LIMITED BY r
D
Figure 9.
= 16 A
Figure 11. Forward Bias Safe
0.1
V
10
0.1
Switching Capability
DS
Gate Charge Characteristics
SINGLE PULSE
T
R
T
t
, DRAIN to SOURCE VOLTAGE (V)
AV
J
A
θ
DS(on)
JA
Operating Area
= MAX RATED
= 25
, TIME IN AVALANCHE (ms)
1
Unclamped Inductive
Q
T
= 115
g
J
, GATE CHARGE (nC)
= 125
o
T
C
V
20
J
DD
o
= 25
10
1
C/W
= 25 V
o
C
o
C
T
J
V
100
= 100
DD
T
30
J
= 50 V
10
= 25 °C unless otherwise noted
o
C
1000 10000 100000
V
DD
40
= 75 V
100
1 ms
10 ms
100 ms
1 s
10 s
DC
500
50
4
10000
1000
1000
100
125
100
100
0.5
10
75
50
25
10
Figure 10.
1
0
10
0.1
25
Figure 12.
-3
V
SINGLE PULSE
R
T
Figure 8.
GS
f = 1 MHz
V
Current vs Case Temperature
A
θ
GS
JA
Limited by Package
= 6 V
= 25
= 0 V
= 115
10
V
o
50
-2
DS
C
Maximum Continuous Drain
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
o
T
C/W
C
Single Pulse Maximum
Capacitance vs Drain
,
V
t, PULSE WIDTH (sec)
CASE TEMPERATURE
10
GS
1
-1
= 10 V
75
R
θ
1
JC
= 0.8
100
10
o
10
C/W
(
o
C
)
125
V
www.fairchildsemi.com
GS
100
= 10 V
C
C
C
oss
iss
rss
1000
100
150