TS34119CD TSC [Taiwan Semiconductor Company, Ltd], TS34119CD Datasheet - Page 6
![no-image](/images/no-image-200.jpg)
TS34119CD
Manufacturer Part Number
TS34119CD
Description
Low Power Audio Amplifier
Manufacturer
TSC [Taiwan Semiconductor Company, Ltd]
Datasheet
1.TS34119CD.pdf
(11 pages)
Design Guideline
POWER DISSIPATION
Figure 8 to 10 indicate the device dissipation (within the IC) for various combinations of V
, R
, and load power.
CC
L
The maximum power which can safely be dissipated within the TS34119 is found from the following equation:
o
P
= (140
C - Ta) / Өja
D
o
Where Ta is the ambient temperature; and Өja is the package thermal resistance (100
C / W for the standard DIP
o
package, and 180
C / W for the surface mount package.) The power dissipated within the TS34119, in a given
2
× I
× V
) - (RL × I
application, it is found from the following equation: P
= (V
) + (I
)
D
CC
CC
RMS
CC
RMS
Where I
is obtained from Figure 15; and I
is the RMS current at the load; and RL is load resistance. Figure 8 to
CC
RMS
10, along with Figure 11 to 13 (distortion curves), and a peak working load current of ±200mA, define the operating
range for the TS34119. The operating range is further defined in terms of allowable load power in Figure 14 for loads
of 8Ω, 16Ω and 32Ω. The left (ascending) portion of each of the three curves is defined by the power level at which
10% distortion occurs. The center flat portion of each curve is defined by the maximum output current capability of
the TS34119. The right (descending) portion of each curve is defined by the maximum internal power dissipation of
o
the IC at 25
C. At higher ambient temperatures, the maximum load power must be reduced according to the above
equations. Operating the device beyond the current and junction temperature limits will degrade long-term reliability.
Circuit Description
TS34119
6-11
2004/09 rev. A