SB820D_06 WTE [Won-Top Electronics], SB820D_06 Datasheet
SB820D_06
Manufacturer Part Number
SB820D_06
Description
8.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Manufacturer
WTE [Won-Top Electronics]
Datasheet
1.SB820D_06.pdf
(4 pages)
Features
!
!
!
!
!
!
K
Mechanical Data
!
!
!
!
!
!
!
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB820D – SB8100D
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Case: D
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
2. Thermal resistance junction to case mounted on heatsink.
POWER SEMICONDUCTORS
2
PAK/TO-263, Molded Plastic
Characteristic
WTE
@T
@T
@I
A
C
F
A
= 100°C
= 100°C
= 8.0A
= 25°C
Symbol
T
V
V
8.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
V
R
j
R(RMS)
I
, T
V
I
RWM
V
FSM
RRM
JC
I
RM
C
FM
O
R
STG
j
SB820D – SB8100D
820D
SB
20
14
1 of 4
PIN 1 +
PIN 3 -
B
830D
G
SB
30
21
D
H
0.55
@T
PIN 1
840D
A
SB
40
28
=25°C unless otherwise specified
P
A
Case
845D
SB
-65 to +150
45
32
+
P
150
400
3
8.0
0.5
3.0
50
850D
SB
50
35
E
0.75
860D
Dim
SB
60
42
B
C
D
G
H
K
A
E
J
P
© 2006 Won-Top Electronics
All Dimensions in mm
D
880D
2
SB
80
56
PAK/TO-263
9.80
9.60
4.40
8.50
2.80
1.00
1.20
0.30
2.35
Min
—
0.85
C
J
8100D
100
SB
70
10.40
10.60
Max
4.80
9.10
1.40
0.90
1.40
0.70
2.75
—
°C/W
Unit
Pb
mA
pF
°C
V
V
A
A
V
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SB820D_06 Summary of contents
Page 1
WTE POWER SEMICONDUCTORS Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! Low Forward Voltage Drop ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency ...
Page 2
Single Pulse Half-Wave 60 Hz Resistive or Inductive Load CASE TEMPERATURE (ºC) C Fig. 1 Forward Current Derating Curve 150 120 8.3ms Single Half Sine-Wave ...
Page 3
MARKING INFORMATION SB8xxD WTE = Manufacturer’s Logo SB8xxD = Device Number xx = 20, 30, 40, 45, 50, 60 100 Polarity = As Marked on Body PACKAGING INFORMATION TAPE & REEL 330mm Reel Diameter Quantity ...
Page 4
Product No. SB820D-T3 SB830D-T3 SB840D-T3 SB845D-T3 SB850D-T3 SB860D-T3 SB880D-T3 SB8100D- Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this ...