STR710F STMICROELECTRONICS [STMicroelectronics], STR710F Datasheet - Page 37

• Manufacturer Part Number: STR710F
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

2.9 Flash Electrical characteristics
V
Table 19. Flash Program/Erase Characteristics 1
Note
Table 20. Flash Program/Erase Characteristics 2
Symbol
Symbol
33
t
t
t
t
t
t
t
t
PDW
RPD
ESR
t
t
t
t
PB0
PB1
PSL
ESL
PW
ES
ES
ES
ES
= 3.3 ± 10%, T
C
C
Word Program
Double Word Program
Bank 0 Program (256K)
Bank 1 Program (16K)
Sector Erase (64K)
Sector Erase (8K)
Bank 0 Erase (256K)
Bank 1 Erase (16K)
Recovery from Power-Down
Program Suspend Latency
Erase Suspend Latency
Endurance
Endurance (Bank1 sectors)
Data Retention
Erase Suspend Rate
0
max
: T
A
: T
= 85 °C after 0 cycles
A
Parameter
Parameter
= 85 °C after max number of cycles
A
= -40 / 85 °C unless otherwise specified.
Double Word Program
Double Word Program
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
Not preprogrammed
Preprogrammed
Min time from Erase
Resume to next Erase
Suspend
Test Conditions
Conditions
STR71xF - ELECTRICAL CHARACTERISTICS
Typ
130
1.6
1.9
0.7
0.6
8.0
6.6
0.9
0.8
2.3
40
60
Min
100
10
20
20
Max(C
13.7
11.2
170
2.1
4.0
3.3
1.1
1.0
1.5
1.3
Value
Value
Typ
0
) Max(C
1.36
1.26
17.2
14.0
1.87
1.66
300
300
4.3
4.9
4.1
20
10
Max
max
)
kcycles
kcycles
Years
Unit
Unit
ms
ms
µs
µs
µs
µs
µs
s
s
s
s
s
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