MCH6448 SANYO [Sanyo Semicon Device], MCH6448 Datasheet - Page 2

• Manufacturer Part Number: MCH6448
• Description: N-Channel Silicon MOSFET Low-Voltage Driver Switching Device Applications
• Manufacturer: SANYO [Sanyo Semicon Device]

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
8
7
6
5
4
3
2
1
0
4.5V
0
0V
PW=10μs
D.C.≤1%
0.1
V IN
Parameter
0.2
Drain-to-Source Voltage, V DS -- V
V IN
0.3
50Ω
G
I D -- V DS
0.4
V DD =10V
0.5
D
S
I D =4A
R L =2.5Ω
0.6
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
R DS (on)4
MCH6448
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
0.7
V OUT
0.8
V GS =0.9V
I D =1mA, V GS =0V
V DS =20V, V GS =0V
V GS =±7.2V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =4A
I D =4A, V GS =4.5V
I D =2A, V GS =2.5V
I D =1A, V GS =1.8V
I D =0.5A, V GS =1.2V
V DS =10V, f=1MHz
See specifi ed Test Circuit
V DS =10V, V GS =4.5V, I D =8A
I S =8A, V GS =0V
0.9
IT16738
1.0
MCH6448
Conditions
16
14
12
10
8
6
4
2
0
0
0.2
0.4
Gate-to-Source Voltage, V GS -- V
0.6
min
I D -- V GS
0.8
0.3
20
1.0
Ratings
typ
11.2
705
150
125
103
1.2
7.7
1.3
2.8
0.8
17
20
26
62
47
81
6
1.4
max
±10
1.6
124
1.0
1.2
22
28
39
V DS =10V
No. A2004-2/4
1
1.8
IT16739
Unit
mΩ
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V
2.0