BD539D ISC [Inchange Semiconductor Company Limited], BD539D Datasheet

BD539D

Manufacturer Part Number

BD539D

Description

isc Silicon NPN Power Transistor

Manufacturer

ISC [Inchange Semiconductor Company Limited]

Datasheet

1.BD539D.pdf (2 pages)

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INCHANGE Semiconductor

isc

DESCRIPTION

·DC Current Gain -

·Collector-Emitter Breakdown Voltage-

·Complement to Type BD540D

APPLICATIONS

·Designed for use in medium power linear and switching

ABSOLUTE MAXIMUM RATINGS(T

THERMAL CHARACTERISTICS

isc Website：www.iscsemi.cn

SYMBOL

: h

: V

applications.

th j-c

th j-a

CBO

CEO

EBO

stg

(BR)CEO

Silicon NPN Power Transistor

= 40(Min.)@ I

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

= 120V(Min)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Power Dissipation

@ T

Collector Power Dissipation

@ T

Junction Temperature

Storage Temperature Range

=25℃

PARAMETER

0.5A

=25

℃)

-65~150

VALUE

120

150

MAX

2.78

62.5

UNIT

℃/W

℃

isc

Product Specification

BD539D

Related parts for BD539D

BD539D Summary of contents

Page 1

... Storage Temperature Range T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance, Junction to Case R th j-c Thermal Resistance, Junction to Ambient R th j-a isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 120 V 120 ℃ 150 ℃ -65~150 MAX UNIT ℃/W 2.78 ℃/W 62.5 isc Product Specification BD539D ...

Page 2

... 3A 0.375A 5A 3A 90V 120V 5V 0. BD539D MIN MAX UNIT 120 V 0.25 V 0.8 V 1.5 V 1.25 V 0.3 mA 0 ...

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