HFI5N65S SEMIHOW [SemiHow Co.,Ltd.], HFI5N65S Datasheet - Page 4

• Manufacturer Part Number: HFI5N65S
• Description: 650V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
-100
-1
-2
1
0
10
0
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
-50
T
V
Operation in This Area
is Limited by R
J
DS
, Junction Temperature [
10
vs Temperature
, Drain-Source Voltage [V]
0
10
10
1
10
* Notes :
-1
-2
1. T
2. T
3. Single Pulse
0
10
C
J
-5
DS(on)
= 150
= 25
D=0.5
0.05
0.02
0.01
0.2
0.1
50
o
C
o
C
Figure 11. Transient Thermal Response Curve
(continued)
DC
10
100
10
100 ms
single pulse
2
-4
o
C]
10 ms
* Note :
1. V
2. I
t
1 ms
D
1
GS
= 250 µA
, Square Wave Pulse Duration [sec]
150
= 0 V
100 µs
10
-3
200
10
3
10
-2
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
-100
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
P
P
* Notes :
10
DM
DM
1. Z
2. Duty Factor, D=t
3. T
-1
θJC
JM
-50
(t) = 1.25
- T
50
C
= P
t
t
T
1
1
J
T
DM
10
, Junction Temperature [
t
t
C
2
2
vs Temperature
vs Case Temperature
o
0
, Case Temperature [
C/W Max.
* Z
0
1
θJC
/t
75
2
(t)
50
10
100
1
100
o
C]
o
C]
◎ SEMIHOW REV.A0,Mar 2010
125
* Note :
1. V
2. I
150
D
GS
= 2.1 A
= 10 V
200
150