ZXTN26020DMFTA DIODES [Diodes Incorporated], ZXTN26020DMFTA Datasheet - Page 2

• Manufacturer Part Number: ZXTN26020DMFTA
• Description: HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

Thermal Characteristics
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 4)
Peak Pulse Current
Base Current
Power Dissipation (Note 3)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 3) @ T
Thermal Resistance, Junction to Ambient (Note 3) @ T
Operating and Storage Temperature Range
Notes:
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
1.2
1.0
0.8
0.6
0.4
0.2
3. Device mounted on FR-4 PCB with 1inch square pads.
4. Device mounted on FR-4 PCB with minimum recommended pad layout
0
0
Fig. 1 Power Dissipation vs. Ambient Temperature
Note 3
Note 4
0.001
20
0.01
T , AMBIENT TEMPERATURE ( C)
0.00001
0.1
A
1
40
D = 0.05
D = 0.005
D = Single Pulse
D = 0.7
D = 0.02
D = 0.01
D = 0.5
D = 0.3
D = 0.1
Characteristic
Characteristic
60
0.0001
80
100
0.001
120
°
A
A
140
= 25°C
= 25°C
Fig. 3 Transient Thermal Response
0.01
t , PULSE DURATION TIME (s)
1
160
www.diodes.com
D = 0.9
2 of 6
0.1
Symbol
Symbol
T
V
V
V
J,
R
R
I
P
P
CBO
CEO
EBO
I
CM
I
T
θ JA
θ JA
C
B
D
D
STG
1,000
100
0.00001
0.1
10
1
1
Fig. 2 Single Pulse Maximum Power Dissipation
Diodes Incorporated
0.001
P(pk)
t , PULSE DURATION TIME (s)
1
T - T = P * R
Duty Cycle, D = t /t
10
A Product Line of
R
J
R
θJA
θ
-55 to +150
JA
t
(t) = r(t) *
A
1
t
= 328°C/W
2
Value
Value
380
125
330
1.5
0.5
20
20
7
4
1
θ
0.1
R
JA
100
θ
1 2
JA
(t)
R
T - T = P * R
Duty Cycle, D = t /t
R
θJA
J
θ
ZXTN26020DMF
Single Pulse
JA
(t) = r(t) *
A
= 328°C/W
1,000
10
R
θ
© Diodes Incorporated
September 2009
JA
θ
JA
1 2
(t)
°C/W
°C/W
Unit
Unit
mW
1,000
°C
W
V
V
V
A
A
A