2SK3113B-S15-AY NEC [NEC], 2SK3113B-S15-AY Datasheet - Page 7

• Manufacturer Part Number: 2SK3113B-S15-AY
• Description: MOS FIELD EFFECT TRANSISTOR
• Manufacturer: NEC [NEC]

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PACKAGE DRAWINGS (Unit: mm)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
1) TO-251 (MP-3-a)
3) TO-252 (MP-3ZK)
Mold Area
1.14 MAX.
1.14 MAX.
0.76 ±0.1
2.3 TYP.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
4
1
4
2.3
5.1 TYP.
1
4.3 MIN.
6.5±0.2
5.3 TYP.
4.3 MIN.
6.6 ±0.2
2
2.3
2
3
3
0.76±0.12
2.3 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
No Plating
No Plating
0.5 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.3±0.1
1.0
2.3 ±0.1
0.5±0.1
0 to 0.25
No Plating
0.5±0.1
Data Sheet D18061EJ3V0DS
0.5 ±0.1
2) TO-251 (MP-3-b)
1.14 MAX.
EQUIVALENT CIRCUIT
0.76±0.12
Gate
Gate
Protection
Diode
2.3 TYP.
1
4
5.3 TYP.
6.6±0.2
Source
Drain
2
3
Body
Diode
2.3 TYP.
0.5±0.1
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2SK3113B
2.3±0.1
0.5±0.1
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