ZXTP03200BZTA DIODES [Diodes Incorporated], ZXTP03200BZTA Datasheet - Page 4

• Manufacturer Part Number: ZXTP03200BZTA
• Description: 200V PNP LOW VCE(sat ) TRANSISTOR IN SOT-89
• Manufacturer: DIODES [Diodes Incorporated]

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note f)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note f)
Collector-Emitter Saturation Voltage (Note f)
Base-Emitter Saturation Voltage (Note f)
Base-Emitter Turn-On Voltage (Note f)
Output Capacitance (Note f)
Transition Frequency
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
ZXTP03200BZ
Document Number DS31902 Rev. 2 - 2
f. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ≤ 2%
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
CE(SAT)
I
I
BE(ON)
C
BE(sat)
h
CBO
EBO
T
T
f
t
obo
t
FE
T
d
r
s
f
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2 00 V PN P L OW V
-220
-220
-220
Min
100
100
20
-7
-245
-245
-225
-120
-130
-160
-940
-840
Typ
-8.4
195
179
105
680
-37
<1
<1
50
31
21
18
75
5
-1000
-1100
Max
-155
-160
-260
-0.5
300
-50
-10
-50
Diodes Incorporated
C E ( s a t )
A Product Line of
MHz
Unit
mV
mV
mV
mV
mV
mV
nA
µA
 n A
pF
ns
ns
ns
ns
V
V
V
V
TRAN SIST OR IN SOT -89
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
f = 50MHz
V
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
EB
CB
CE
CC
= -100µA
= -100µA
= -1µA, R
= -10mA
= -10mA, V
= -1A, V
= -2A, V
= -5A, V
= -100mA, I
= -500mA, I
= -1A, I
= -2A, I
= -2A, I
= -2A, V
= -I
= -200V
= -200V, T
= -10V. f = 1MHz
= -10V, I
= -50V, I
= -6V
B2
ZXTP03200BZ
Test Condition
= -100mA
B
B
B
CE
CE
CE
CE
= -100mA
= -400mA
= -400mV
BE
C
C
= -5V
= -5V
= -5V
= -5V
CE
B
B
= -100mA
≤ 1kΩ
amb
= -1A
= -10mA
= -25mA
© Diodes Incorporated
= -5V
= 100°C
August 2009