2SK3210S HITACHI [Hitachi Semiconductor], 2SK3210S Datasheet
2SK3210S
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2SK3210S Summary of contents
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Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance R =35m typ. DS High speed switching 4V gate drive device can be driven from 5V source Outline LDPAK G Target Specification, 1st. Edition 4 4 ...
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Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: ...
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Electrical Characteristics ( Item Drain to source breakdown voltage V Gate to source breakdown voltage V Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state ...
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Package Dimensions (Unit: mm) 4.44 ± 0.2 10.2 ± 0.3 1.2 ± 0.2 1.27 ± 0.2 +0.2 0.86 –0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 4 1.3 ± 0.2 10.2 ± 0.3 2.59 ...
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Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...