ZXTP4003G DIODES [Diodes Incorporated], ZXTP4003G Datasheet - Page 3

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ZXTP4003G

Manufacturer Part Number
ZXTP4003G
Description
100V PNP LED DRIVING TRANSISTOR IN SOT223
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
Electrical Characteristics
Electrical Characteristics
Collector-Emitter Breakdown Voltage (Note 6)
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Notes:
Datasheet Number: DS35459 Rev 1 - 2
ZXTP4003G
6. Measured under pulsed conditions. Pulse width = 300
500
400
300
200
100
Characteristic
100µ
0
85°C
25°C
-55°C
125°C
-I
C
1m
Collector Current (A)
h
FE
@T
@T
v I
10m
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
C
100m
V
CE
Symbol
BV
V
= -0.2V
µs. Duty cycle ≤ 2%
I
I
BE(on)
h
CBO
EBO
t
t
t
t
t
t
(d)
(r)
(s)
(s)
FE
(f)
(f)
CEO
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1
3 of 5
-100
Min
100
60
-
-
-
-
-
-
-
-
-
1.0
0.8
0.6
0.4
0.2
50
40
30
20
10
100m
100µ
0
-0.71
1348
-170
Typ
133
112
378
388
382
363
75
V
-
-
CE
Capacitance v Voltage
= -0.2V
-I
C
1m
-0.95
Max
V
-50
-50
Diodes Incorporated
-
-
-
-
-
-
-
-
-
BE(on)
Collector Current (A)
Cobo
1
A Product Line of
-Voltage(V)
25°C
Unit
v I
nA
nA
10m
ns
ns
ns
ns
ns
ns
V
V
-
C
I
V
V
I
I
I
V
-I
V
-I
C
C
C
C
-55°C
B2
B2
CB
EB
CC
CC
85°C
10
= -10mA
= -85mA, V
= -150mA, V
= -150mA, V
= 1.5mA, V
= 1.5mA, V
100m
= -100V
= -7V
= -80V, I
= -80V, I
f = 1MHz
Test Condition
ZXTP4003G
125°C
C
C
CE
= -150mA,
= -150mA,
CE
CE
CE(ON)
CE(ON)
© Diodes Incorporated
December 2011
= -0.15V
= -0.2V
= -0.2V
100
1
= -0.2V
= -4V

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