2SA1030BTZ RENESAS [Renesas Technology Corp], 2SA1030BTZ Datasheet - Page 2

• Manufacturer Part Number: 2SA1030BTZ
• Description: Silicon PNP Epitaxial
• Manufacturer: RENESAS [Renesas Technology Corp]

2SA1029, 2SA1030
Electrical Characteristics
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Base to emitter voltage
Collector to emitter
saturation voltage
Gain bandwidth product
Collector output
capacitance
Note:
2SA1029
2SA1030
Rev.3.00 Aug 10, 2005 page 2 of 5
1. The 2SA1029 and 2SA1030 are grouped by h
Item
100 to 200
100 to 200
B
Symbol
V
V
V
V
h
(BR)CBO
(BR)CEO
160 to 320
160 to 320
(BR)EBO
Cob
I
I
V
CE(sat)
CBO
EBO
FE
f
BE
T
*
1
C
Min
–30
–30
100
200
–5
—
—
—
—
—
250 to 500
—
2SA1029
Typ
280
3.3
—
—
—
—
—
—
—
—
D
Max
–0.5
–0.5
–0.8
–0.2
500
4.0
FE
—
—
—
—
as follows.
Min
–55
–50
100
200
–5
—
—
—
—
—
2SA1030
Typ
280
3.3
—
—
—
—
—
—
—
—
Max
–0.5
–0.5
–0.8
–0.2
320
4.0
—
—
—
—
MHz V
Unit
pF
V
V
V
V
V
A
A
I
I
I
V
V
V
I
V
I
I
I
I
V
f = 1 MHz
C
C
E
C
C
C
B
C
CB
EB
CE
CE
CB
CB
= –10 µA, I
= –1 mA, R
= –10 A, I
= –2 mA
= –2 mA
= –10 mA,
= –1 mA
= –2 mA
Test conditions
= –2 V, I
= –18 V, I
= –12 V,
= –12 V,
= –12 V,
= –10 V, I
(Ta = 25°C)
C
E
C
BE
E
E
= 0
= 0
= 0
= 0
= 0,
=