2SA1121SCTL-E RENESAS [Renesas Technology Corp], 2SA1121SCTL-E Datasheet - Page 2

• Manufacturer Part Number: 2SA1121SCTL-E
• Description: Silicon PNP Epitaxial
• Manufacturer: RENESAS [Renesas Technology Corp]

2SA1121
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Collector to emitter saturation voltage
DC current transfer ratio
Base to emitter voltage
Note:
Mark
h
Rev.2.00 Aug 10, 2005 page 2 of 4
FE
Grade
1. The 2SA1121 is grouped by h
100 to 200
Item
SC
C
160 to 320
SD
D
FE
Symbol
V
V
V
V
as follows.
h
(BR)CBO
(BR)CEO
(BR)EBO
I
CE(sat)
V
h
CBO
FE
FE
BE
*
1
Min
–35
–35
100
–4
10
—
—
—
–0.64
–0.2
Typ
—
—
—
—
—
—
Max
–0.5
–0.6
320
—
—
—
—
—
Unit
V
V
V
V
V
A
I
I
I
V
I
V
V
(Pulse test)
V
C
C
E
C
CB
CE
CE
CE
= –10 A, I
= –1 mA, R
= –10 A, I
= –150 mA, I
= –20 V, I
= –3 V, I
= –3 V, I
= –3 V, I
Test conditions
C
C
C
E
C
BE
E
= –10 mA
= –500 mA
= –10 mA
= 0
= 0
B
= 0
=
= –15 mA
(Ta = 25°C)