2SA1179N_06 SANYO [Sanyo Semicon Device], 2SA1179N_06 Datasheet

2SA1179N_06

Manufacturer Part Number

2SA1179N_06

Description

Low-Frequency General-Purpose Amp Applications

Manufacturer

SANYO [Sanyo Semicon Device]

Datasheet

1.2SA1179N_06.pdf (4 pages)

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Ordering number : EN7198A

2SA1179N / 2SC2812N

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : 2SA1179N : M / 2SC2812N : L

* : The 2SA1179N / 2SC2812N are classified by 1mA h FE as follws:

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

•

Miniature package facilitates miniaturization in end products.

High breakdown voltage.

Rank

h FE

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

200 to 400

( ) : 2SA1179N

V (BR)CBO

V (BR)CEO

V (BR)EBO

V CE (sat)

V BE (sat)

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

Tstg

h FE

Cob

I CP

P C

I C

I B

f T

2SA1179N / 2SC2812N

SANYO Semiconductors

V CB =(--)35V, I E =0A

V EB =(--)4V, I C =0A

V CE =(--)6V, I C =(--)1mA

2SC2812N : V CE =6V, I C =1mA

2SA1179N : V CE =- -6V, I C =--10mA

V CB =(--)6V, f=1MHz

I C =(--)50mA, I B =(--)5mA

I C =(--)10 A, I E =0A

I C =(--)1mA, R BE =

I E =(--)10 A, I C =0A

92006 MS IM TC-00000143,00000144 / 72602 TS IM TA-2636, 2637

PNP / NPN Epitaxial Planar Silicon Transistors

Low-Frequency General-Purpose

Amp Applications

Conditions

DATA SHEET

min

(- -)55

(- -)50

(--)5

200

(- -0.15)0.1

Ratings

(4.0)3.0

typ

Ratings

(180)

100

--55 to +150

max

(- -)150

(- -)300

(--)0.1

(--)0.5

(--)1.0

(--)55

(--)50

(--)30

(- -)5

200

150

400

No.7198-1/4

Unit

MHz

Related parts for 2SA1179N_06

2SA1179N_06 Summary of contents

Page 1

Ordering number : EN7198A 2SA1179N / 2SC2812N Features Miniature package facilitates miniaturization in end products. • High breakdown voltage. • Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25 C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current ...

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2SA1179N_06 SANYO [Sanyo Semicon Device], 2SA1179N_06 Datasheet

2SA1179N_06

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2SA1179N_06 Summary of contents

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