2SA1179_08 SANYO [Sanyo Semicon Device], 2SA1179_08 Datasheet

2SA1179_08

Manufacturer Part Number

2SA1179_08

Description

Low-Frequency General-Purpose Amplifier Applications

Manufacturer

SANYO [Sanyo Semicon Device]

Datasheet

1.2SA1179_08.pdf (5 pages)

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Ordering number : EN3218B

2SA1179 / 2SC2812

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking: 2SA1179: M / 2SC2812: L

*: The 2SA1179 / 2SC2812 are classified by 1mA h FE as follws:

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

•

Miniature package facilitates miniaturization in end products.

High breakdown voltage.

Rank

h FE

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

135 to 270

( ) : 2SA1179

200 to 400

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

Tstg

h FE

I CP

P C

I C

I B

f T

SANYO Semiconductors

2SA1179 / 2SC2812

300 to 600

V CB =(--)35V, I E =0A

V EB =(- -)4V, I C =0A

V CE =(--)6V, I C =(- -)1mA

2SC2812 : V CE =6V, I C =1mA

2SA1179 : V CE =- -6V, I C =--10mA

PNP / NPN Epitaxial Planar Silicon Transistors

Low-Frequency General-Purpose

Amplifier Applications

20608 TI IM TC-00001200 / 11707CA TI IM X-2476, 2478

Conditions

DATA SHEET

min

135*

Ratings

typ

Ratings

(180)

100

Continued on next page.

--55 to +150

max

(--)150

(--)300

(--)0.1

(--)55

(--)50

(--)30

600*

(--)5

200

150

No.3218-1/5

Unit

MHz

μA

°C

Related parts for 2SA1179_08

2SA1179_08 Summary of contents

Page 1

Ordering number : EN3218B 2SA1179 / 2SC2812 Features Miniature package facilitates miniaturization in end products. • High breakdown voltage. • Specifications ( ) : 2SA1179 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector ...

Page 2

Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Package Dimensions unit : mm (typ) 7013A-009 2.9 0 0.95 0 Base 2 ...

Page 3

1000 7 5 Ta=75°C 25°C 3 --25°C 2 100 --0.1 --1.0 --10 Collector Current ...

Page 4

1 2SA1179 2 f=270MHz --1mA 0 --1.0 Collector-to-Emitter Voltage, V ...

Page 5

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all ...

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