2SA1188DTZ-E RENESAS [Renesas Technology Corp], 2SA1188DTZ-E Datasheet - Page 2

• Manufacturer Part Number: 2SA1188DTZ-E
• Description: Silicon PNP Epitaxial
• Manufacturer: RENESAS [Renesas Technology Corp]

2SA1188
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Notes: 1. The 2SA1188 is grouped by h
250 to 500
Rev.3.00 Aug 10, 2005 page 2 of 6
D
2. Pulse test
400 to 800
Item
E
FE
Symbol
V
V
V
V
V
as follows.
h
(BR)CBO
(BR)CEO
(BR)EBO
Cob
I
I
CE(sat)
BE(sat)
CBO
FE
EBO
f
T
*
1
Min
–90
–90
250
–5
—
—
—
—
—
—
–0.05
–0.7
Typ
130
3.2
—
—
—
—
—
—
–0.15
Max
–0.1
–0.1
–1.0
800
—
—
—
—
—
MHz
Unit
pF
V
V
V
V
V
A
A
I
I
I
V
V
V
I
I
I
V
I
V
f = 1 MHz
C
C
E
C
C
B
C
CB
EB
CE
CE
CB
= –10 A, I
= –1 mA, R
= –10 A, I
= –2 mA*
= –10 mA,
= –1 mA*
= –10 mA
= –70 V, I
= –2 V, I
= –12 V,
= –6 V,
= –10 V, I
Test conditions
2
2
C
E
C
BE
E
E
= 0
= 0
= 0
= 0
= 0,
=
(Ta = 25°C)