2SA1193KTZ-E RENESAS [Renesas Technology Corp], 2SA1193KTZ-E Datasheet - Page 3

• Manufacturer Part Number: 2SA1193KTZ-E
• Description: Silicon PNP Epitaxial, Darlington
• Manufacturer: RENESAS [Renesas Technology Corp]

2SA1193(K)
Main Characteristics
Rev.2.00 Aug 10, 2005 page 3 of 5
–500
–400
–300
–200
–100
–1.0
–0.3
–0.1
–10
0.9
0.6
0.3
–3
0
–10
0
Maximum Collector Dissipation Curve
Collector to Emitter Voltage V
Ambient Temperature Ta (°C)
Ta = 25°C
I
Pulse
C
Typical Output Characteristics
= 500 I
Collector Current I
–2
–30
Saturation Voltage vs.
50
Collector Current
B
75°C
–4
–100
–6
100
V
C
–300
–5 A
CE(sat)
V
I
B
BE(sat)
(mA)
= 0
–8
CE
150
(V)
–1,000
–10
100,000
–0.003
30,000
10,000
–0.03
–0.01
3,000
1,000
–1.0
–0.3
–0.1
0.03
0.01
300
100
1.0
0.3
0.1
–3
10
–10
3
–10
–3
Collector to Emiter Voltage V
Switching Time vs. Collector Current
I
Ta = 25°C
I
i
C
C (peak)
C max
DC Current Transfer Ratio vs.
V
Pulse
= 500 I
Collector Current I
Ta = 75 °C
CE
Collector Curret I
–30
–30
Area of Safe Operation
–10
25 °C
= –3 V
Collector Current
B
–100
–100
–30
t
stg
C
C
–300
–300
–100
(mA)
(mA)
Ta = 25°C
t
t
off
t
on
CE
d
(V)
–1,000
–1,000
–300