2SK3446TZ-E RENESAS [Renesas Technology Corp], 2SK3446TZ-E Datasheet - Page 5

• Manufacturer Part Number: 2SK3446TZ-E
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

2SK3446
Rev.8.00 Sep 07, 2005 page 5 of 6
4
3
2
1
0
0
Source to Drain Voltage
Vin
4 V
Vin Monitor
Switching Time Test Circuit
Reverse Drain Current vs.
Source to Drain Voltage
0.01
0.1
10
10 µ
1
50 Ω
5 V
D = 1
0.5
1
100 µ
D.U.T.
Normalized Transient Thermal Impedance vs. Pulse Width
V
GS
Pulse Test
= 0, –5 V
V
R
1 m
SDF
L
V
= 30 V
DD
Vout
Monitor
(V)
2
10 m
Pulse Width PW (S)
100 m
1
t d(on)
P
θch – a (t) = γ s (t) • θch – a
θch – a = 139°C/W, Ta = 25°C
1.5
1.0
0.5
Vout
Vin
DM
0
–25
10
V
Pulse Test
Gate to Source Cutoff Voltage
DS
Case Temperature
0
10%
= 10 V
vs. Case Temperature
10%
PW
T
25
100
90%
t r
Waveform
50
1 mA
1000
D =
75
t d(off)
I
D
PW
90%
T
100 125 150
= 10 mA
Tc (°C)
0.1 mA
10000
90%
10%
t f