2SA1201G-X-AB3-R UTC [Unisonic Technologies], 2SA1201G-X-AB3-R Datasheet - Page 2

• Manufacturer Part Number: 2SA1201G-X-AB3-R
• Description: SILICON PNP EPITAXIAL TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

2SA1201
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
2. Mounted on cermic substrate( 250mm
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
FE
SYMBOL
SYMBOL
V
V
V
80 - 160
V
(BR)CEO
(BR)EBO
V
V
T
2
CE(SAT)
I
I
C
V
h
P
CBO
EBO
T
CBO
CEO
EBO
I
STG
I
× 0.8t )
f
FE
OB
C
B
BE
T
(T
C
J
O
(T
A
A
=25°C)
=25°C, unless otherwise specified)
I
I
V
V
V
I
V
V
V
C
E
C
CB
EB
CE
CE
CE
CB
= -1mA, I
= -10mA, I
= -500mA, I
= -120V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -10V, I
TEST CONDITIONS
C
C
C
C
C
=0
=0
= -100mA
= -100mA
= -100mA
B
E
=0
=0, f=1MHz
E
B
=0
= -50mA
1000 (Note 2)
PNP SILICON TRANSISTOR
-55 ~ +150
RATINGS
-120
-120
-800
-160
500
150
-5
120 - 240
-120
MIN TYP MAX UNIT
80
-5
Y
120
QW-R208-024,Ca
-0.1
-0.1
-1.0
240
-1.0
30
UNIT
mW
mW
mA
mA
°C
°C
V
V
V
2 of 2
MHz
μA
μA
pF
V
V
V
V