2SC5624VH-TL-E RENESAS [Renesas Technology Corp], 2SC5624VH-TL-E Datasheet
2SC5624VH-TL-E
Related parts for 2SC5624VH-TL-E
2SC5624VH-TL-E Summary of contents
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Silicon NPN Epitaxial High Frequency Low Noise Amplifier Features High gain bandwidth product GHz typ. T High power gain and low noise figure typ 1.2 dB typ ...
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Electrical Characteristics Item Symbol Collector cutoff current I Collector cutoff current I Emitter cutoff current I DC current transfer ratio Collector output capacitance Cob Gain bandwidth product Power gain Noise figure Main Characteristics Maximum Collector Dissipation Curve 200 150 ...
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Collector Output Capacitance vs. Collector to Base Voltage 1.0 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 Collector to Base Voltage Power Gain vs. Collector Current 1.8 GHz ...
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S11 Parameter vs. Frequency −.2 −.4 −.6 −.8 −1 Condition ; 100 to 3000 MHz (100 MHz step) S12 Parameter vs. Frequency ...
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S Parameter S11 f (MHz) MAG ANG 100 0.445 –27.3 200 0.447 –54.4 300 0.439 –78.7 400 0.432 –98.8 500 0.424 –112.8 600 0.414 –124.3 700 0.407 –133.4 800 0.398 –141.5 900 0.390 –147.9 1000 0.386 –154.1 1100 0.381 ...
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... A-A Section B-B Section Ordering Information Part Name 2SC5624VH-TL-E 3000 pcs. Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is applied. Contact Renesas sales office for any question regarding recommended soldering condition of Renesas. Rev.3.00, Feb.21.2005, page Package Name MASS[Typ ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...