2SK3502 FUJI [Fuji Electric], 2SK3502 Datasheet - Page 3

• Manufacturer Part Number: 2SK3502
• Description: N CHANNEL SILICON POWER MOSET
• Manufacturer: FUJI [Fuji Electric]

2SK3502-01MR
100
24
22
20
18
16
14
12
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
8
6
4
2
0
1
0.00
0
Typical Forward Characteristics of Reverse Diode
Typical Gate Charge Characteristics
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
-50
VGS=f(Qg):ID=10A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C
10
0.25
-25
20
0.50
0
30
0.75
25
480V
VSD [V]
Qg [nC]
Tch [ C]
40
1.00
300V
50
Vcc= 120V
max.
50
1.25
75
typ.
60
1.50
100
70
125
1.75
150
80
2.00
100p
10n
10p
10
10
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1n
1p
2
1
0
10
-50
t=f(ID):Vcc=300V, VGS=10V, RG=10
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
Typical Switching Characteristics vs. ID
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
-1
-25
td(on)
10
10
0
0
0
25
FUJI POWER MOSFET
VDS [V]
ID [A]
Tch [ C]
10
50
td(off)
max.
typ.
min.
1
75
100
10
10
2
Ciss
Coss
Crss
1
125
tr
tf
150
10
3
3