2SK3505-01 SANYO [Sanyo Semicon Device], 2SK3505-01 Datasheet
2SK3505-01
Manufacturer Part Number
2SK3505-01
Description
N CHANNEL SILICON POWER MOSFET
Manufacturer
SANYO [Sanyo Semicon Device]
Datasheet
1.2SK3505-01.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3505-01
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
Company:
Part Number:
2SK3505-01MR
Manufacturer:
FUJI
Quantity:
40 000
Part Number:
2SK3505-01MR
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
2SK3505-01MR
Super FAP-G Series
*4 VDS 500V
*1 L=2.27mH, Vcc=50V
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
< =
off
on
*2 Tch 150°C
= <
c
=25°C unless otherwise specified)
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR *2
Symbol
ch
stg
AS *1
D
DS
GS
DS
*3 I
R
R
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
r
f
rr
I
/dt
fs
DSS
(BR)DSS
GS(th)
oss
*3
DS(on)
iss
rss
G
GS
GD
SD
(on)
(off)
rr
F
= <
*4
-I
D
, -di/dt=50A/µs, Vcc BV
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
V
V
R
V
V
V
I
I
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=2.27mH T
I
I
-di/dt=100A/µs
channel to ambient
channel to case
D
D
D
D
D
F
F
CC
GS
+150
GS
DS
DS
GS
DS
GS
CC
GS
=14A V
=14A V
= 250 µ A
= 250 µ A
=7A
=7A
=14A
500
±14
±56
±30
242
=300V I
=10V
=10
14
20
60
=500V V
=400V V
=±30V
=25V
=0V
=250V
=10V
5
2.1
V
N-CHANNEL SILICON POWER MOSFET
V
GS
GS
DS
GS
V
= <
=10V
=25V
D
ch
=0V T
=0V
GS
GS
DS
=7A
V
V
=25°C
GS
DS
=0V
=0V
=0V
DSS
T
=0V
=V
ch
ch
kV/µs
kV/µs
W
°C
°C
=25°C
Unit
mJ
, Tch 150°C
V
A
A
V
A
GS
=25°C
T
= <
T
ch
ch
=125°C
=25°C
TO-220F
Outline Drawings
FUJI POWER MOSFET
Equivalent circuit schematic
Gate(G)
Min.
Min.
500
14
3.0
7
1600
Typ.
Typ.
160
10
14
18
16
35
33
12.5
10.5
0.35
7
8
1.00
0.65
6.0
Source(S)
Drain(D)
2400
Max.
250
100
240
62.0
Max.
25
10.5
27
24
50
15
50
19
16
2.08
5.0
0.46
1.50
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1
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2SK3505-01 Summary of contents
Page 1
... Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current I D Pulsed drain current ...
Page 2
... Characteristics Allowable Power Dissipation PD=f(Tc Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25° VDS [V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ...
Page 3
... Drain-Source On-state Resistance RDS(on)=f(Tch):ID=7A,VGS=10V 1.2 1.1 1.0 0.9 0.8 0.7 max. 0.6 0.5 typ. 0.4 0.3 0.2 0.1 0.0 -50 - Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=14A, Tch=25° Vcc= 100V 18 250V 16 400V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C ...
Page 4
... Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t 0.5 0.2 0 0.05 0.02 0. Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch=25°C. Vcc=50V Single Pulse [ ...