2SC5935P PANASONIC [Panasonic Semiconductor], 2SC5935P Datasheet
2SC5935P
Manufacturer Part Number
2SC5935P
Description
Silicon NPN triple diffusion planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.2SC5935P.pdf
(3 pages)
Power Transistors
2SC5935
Silicon NPN triple diffusion planar type
For power amplification
For TV vertical deflection output
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2004
• Satisfactory linearity of forward current transfer ratio h
• Dielectric breakdown voltage of the package: 5 kV
• Full-pack package which can be installed to the heat sink with one
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
screw.
2. * : Rank classification
Parameter
Rank
Parameter
h
FE1
T
60 to 140
a
= 25°C
Q
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
I
P
I
T
V
V
V
h
CBO
CEO
EBO
C
CP
I
I
h
C
stg
V
CE(sat)
C
FE1
100 to 240
CBO
EBO
j
f
CBO
CEO
EBO
FE2
= 25°C
BE
T
*
P
−55 to +150
Rating
I
I
I
V
V
V
V
V
I
V
C
C
E
C
200
180
150
CE
2.0
CE
CB
EB
CE
CE
25
= 500 µA, I
= 50 µA, I
= 5 mA, I
= 500 mA, I
6
2
3
SJD00318AED
= 10 V, I
= 10 V, I
= 4 V, I
= 10 V, I
= 10 V, I
= 200 V, I
FE
B
C
E
C
Conditions
Unit
C
C
C
= 0
C
= 0
°C
°C
W
V
V
V
A
A
= 0
B
E
= 0.5 A, f = 1 MHz
= 400 mA
= 150 mA
= 400 mA
= 0
= 0
= 50 mA
1
9.9
Min
200
180
2
60
50
±0.3
6
3
2.54
5.08
0.8
1.6
1.4
±0.1
±0.2
±0.30
±0.50
±0.2
Typ
φ 3.2
20
±0.1
TO-220D-A1 Package
Max
240
50
50
1
1
4.6
1: Base
2: Collector
3: Emitter
±0.2
0.55
Unit: mm
MHz
2.9
2.6
Unit
±0.15
µA
µA
V
V
V
V
V
±0.2
±0.1
1
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2SC5935P Summary of contents
Page 1
Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio h • Dielectric breakdown voltage of the package • Full-pack package ...
Page 2
( (2) With a 100 × 100 × heat sink (3) Without heat sink ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...