2SK3600-01S FUJI [Fuji Electric], 2SK3600-01S Datasheet - Page 2

• Manufacturer Part Number: 2SK3600-01S
• Description: N-CHANNEL SILICON POWER MOSFET
• Manufacturer: FUJI [Fuji Electric]

2SK3600-01L,S,SJ
Characteristics
100
120
100
0.1
80
60
40
20
10
80
60
40
20
1
0
0
0.1
0
0
Typical Transconductance
Typical Output Characteristics
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
Allowable Power Dissipation
PD=f(Tc)
ID=f(VDS):80µs Pulse test,Tch=25°C
25
2
50
4
1
20V
VDS [V]
Tc [ C]
ID [A]
75
6
100
10
8
VGS=5.5V
10V
7.5V
7.0V
6.5V
6.0V
8V
125
10
100
150
12
0.18
0.15
0.12
0.09
0.06
0.03
0.00
400
350
300
250
200
150
100
100
0.1
50
10
0
1
0
0
0
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
Typical Drain-Source on-state Resistance
I
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
AS
I
VGS=
5.5V
AS
I
=12A
AS
=17A
=29A
1
25
6.0V
10
2
6.5V
3
FUJI POWER MOSFET
50
20
starting Tch [ C]
4
7.0V
VGS[V]
75
ID [A]
30
5
7.5V
6
100
40
7
8V
8
125
50
10V
9
20V
150
10
60
2