2SK360IGFTL RENESAS [Renesas Technology Corp], 2SK360IGFTL Datasheet
2SK360IGFTL
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2SK360IGFTL Summary of contents
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Silicon N-Channel MOS FET Application VHF amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Rev.2.00, Aug 10.2005, page REJ03G0811-0200 (Previous ADE-208-1170) 1. Gate 3 2. Drain 3. Source 1 2 Rev.2.00 Aug.10.2005 ...
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Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note – Electrical Characteristics Item Drain to source breakdown voltage Gate ...
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Maximum Channel Dissipation Curve 150 100 Ambient Temperature Ta (°C) Typical Transfer Characteristics 10 8.0 6.0 4.0 2.0 0 –2.0 –1.6 –1.2 Gate to Source Voltage V Forward Transfer Admittance vs. ...
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Reverse Transfer Capacitance vs. Drain to Source Voltage 0.5 0.2 0.1 0.05 0.02 0.01 0.5 1.0 2 Drain to Source Voltage V Power Gain, Noise Figure vs. Drain to Source Voltage ...
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... A-A Section Ordering Information Part Name 2SK360IGETL 3000 2SK360IGFTL 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Aug 10.2005, page Package Name MASS[Typ.] MPAK(T) / MPAK(T)V, ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...