2SK3811-ZP NEC [NEC], 2SK3811-ZP Datasheet

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2SK3811-ZP

Manufacturer Part Number
2SK3811-ZP
Description
SWITCHING N-CHANNEL POWER MOSFET
Manufacturer
NEC [NEC]
Datasheet

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Part Number:
2SK3811-ZP
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Document No. D16737EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
• Super low on-state resistance
• High Current Rating: I
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1. PW ≤ 10
designed for high current switching applications.
R
The 2SK3811 is N-channel MOS Field Effect Transistor
DS(on)
2. Starting T
3. R
= 1.8 mΩ MAX. (V
G
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 25 Ω, T
µ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
ch(peak)
D(DC)
= 25°C)
Note2
DS
C
A
GS
GS
= 25°C)
= 25°C)
= 0 V)
= ±110 A
Note3
≤ 150°C
= 0 V)
= 10 V, I
Note3
DD
= 20 V, R
N-CHANNEL POWER MOS FET
D
= 55 A)
I
A
I
D(pulse)
V
V
G
D(DC)
P
P
T
E
E
T
I
= 25°C)
GSS
DSS
AR
stg
AS
AR
= 25 Ω, V
T1
T2
ch
DATA SHEET
SWITCHING
−55 to +150
GS
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V, L = 100
±110
±440
213
150
518
518
±20
1.5
40
72
ORDERING INFORMATION
PART NUMBER
2SK3811-ZP
mJ
mJ
°C
°C
W
W
V
V
A
A
A
µ
H
2SK3811
(TO-263)
TO-263 (MP-25ZP)
PACKAGE
2004

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2SK3811-ZP Summary of contents

Page 1

... Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16737EJ1V0DS00 (1st edition) Date Published June 2004 NS CP(K) Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION PART NUMBER 2SK3811- 25° DSS V ±20 ...

Page 2

... µ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ µ τ ≤ Duty Cycle 1% ch Data Sheet D16737EJ1V0DS 2SK3811 MIN. TYP. MAX. UNIT µ ±100 nA 2.0 3.0 4 1.4 1.8 mΩ 17700 pF 2200 pF 1300 pF 54 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 250 200 150 100 50 0 150 175 100 µ 100 R = 83.3°C/W th(ch- 0.587°C/W th(ch- 100 Pulse Width - s Data Sheet D16737EJ1V0DS 2SK3811 50 75 100 125 150 175 - Case Temperature - ° 100 1000 3 ...

Page 4

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 1000 Data Sheet D16737EJ1V0DS 2SK3811 = 150°C 75°C 25°C −55° Gate to Source Voltage - V GS 75°C 25°C −55° Pulsed ...

Page 5

... Q - Gate Charge - nC G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 1 1.5 0 Diode Forward Current - A F Data Sheet D16737EJ1V0DS 2SK3811 MHz C iss C oss C rss 1 10 100 110 ...

Page 6

... L - Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 Starting T - Starting Channel Temperature - °C ch Data Sheet D16737EJ1V0DS 2SK3811 Ω → ≤ 100 125 150 ...

Page 7

... Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 1.3±0.2 0.25 Data Sheet D16737EJ1V0DS 2SK3811 7 ...

Page 8

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3811 Not all M8E 02. 11-1 ...

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