2SK3815_07 SANYO [Sanyo Semicon Device], 2SK3815_07 Datasheet

2SK3815_07

Manufacturer Part Number

2SK3815_07

Description

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Manufacturer

SANYO [Sanyo Semicon Device]

Datasheet

1.2SK3815_07.pdf (5 pages)

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Ordering number : EN8053A

2SK3815

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Note : *1 V DD =20V, L=50µH, I AV =23A

Marking : K3815

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Enargy (Single Pulse) *1

Avalanche Current *2

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

Motor drive, DC / DC converter.

Avalanche resistance guarantee.

*2 L≤50µH, single pulse

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Symbol

V GSS

V DSS

E AS

Tstg

I DP

Tch

I AV

P D

I D

SANYO Semiconductors

PW≤10µs, duty cycle≤1%

Tc=25°C

2SK3815

N2807 TI IM TC-00001041 / 93004QA TS IM TB-00000601

Conditions

DATA SHEET

Ratings

--55 to +150

1.65

19.8

±20

150

No.8053-1/5

Unit

°C

Related parts for 2SK3815_07

2SK3815_07 Summary of contents

Page 1

Ordering number : EN8053A 2SK3815 Features Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive converter. • Avalanche resistance guarantee. • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) ...

Page 2

Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall ...

Page 3

0.5 1.0 1.5 2.0 2.5 Drain-to-Source Voltage (on 140 120 100 ...

Page 4

=30V =23A Total Gate Charge 2.0 1.65 1.5 1.0 0.5 0 ...

Page 5

Note on usage : Since the 2SK3815 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that ...

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