2N60Z UTC [Unisonic Technologies], 2N60Z Datasheet - Page 2

• Manufacturer Part Number: 2N60Z
• Description: 2A, 600V N-CHANNEL POWER MOSFET
• Manufacturer: UTC [Unisonic Technologies]

2N60Z
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Drain Current
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Junction to Ambient
Junction to Case
PARAMETER
ABSOLUTE MAXIMUM RATINGS (
THERMAL DATA
2. Repetitive Rating : Pulse width limited by T
3. L=64mH, I
4. I
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SD
UNISONIC TECHNOLOGIES CO., LTD
≤2.4A, di/dt≤200A/μs, V
www.unisonic.com.tw
PARAMETER
AS
=2.0A, V
Continuous
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
TO-220F
TO-251/TO-252
TO-220F
TO-251/TO-252
TO-220F
TO-251/TO-252
PACKAGE
DD
=50V, R
DD
≤ BV
G
=25 Ω, Starting T
DSS
, Starting T
SYMBOL
SYMBOL
T
J
C
dv/dt
V
V
T
T
E
E
θ
I
I
θ
= 25°С, unless otherwise specified)
P
T
GSS
I
DM
OPR
STG
DSS
AR
AS
AR
JA
D
Jc
D
J
J
J
= 25°C
= 25°C
-55 ~ +150
-55 ~ +150
RATINGS
RATINGS
+150
62.5
2.87
600
±20
140
100
2.0
2.0
8.0
4.5
4.5
5.5
23
44
Power MOSFET
QW-R502-829.B
UNIT
°С/W
°С/W
°С/W
°С/W
UNIT
V/ns
mJ
mJ
°С
°С
°С
W
W
2 of 6
V
V
A
A
A