2N40 UTC [Unisonic Technologies], 2N40 Datasheet - Page 2

• Manufacturer Part Number: 2N40
• Description: 2A, 400V N-CHANNEL POWER MOSFET
• Manufacturer: UTC [Unisonic Technologies]

Drain-Source Voltage
Gate-Source Voltage
Drain Current
Avalanche Current
Single Pulsed Avalanche Energy
Power Dissipation
Linear Derating Factor
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Junction to Ambient
Junction to Case
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
2N40
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
ELECTRICAL CHARACTERISTICS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
PARAMETER
Continuous
Pulsed
Forward
Reverse
△
△
Preliminary
SYMBOL
SYMBOL
SYMBOL
BV
P
R
Q
V
BV
t
V
t
V
T
C
C
D(OFF)
E
D
I
C
Q
Q
Q
I
GS(TH)
DS(ON)
D(ON)
V
I
G(TOT)
(T
I
P
θ
θ
DSS
I
T
DSS
GSS
DSS
GSS
I
DM
/ T
STG
AR
OSS
t
I
SM
t
RSS
t
D
AS
ISS
△
GS
GD
R
SD
JA
JC
F
S
rr
RR
D
DSS
J
(T
C
=25°C, unless otherwise specified)
/ T
△
J
=25°C, unless otherwise specified)
mb
J
I
V
V
V
V
V
V
V
V
V
R
T
I
I
D
S
S
DS
DS
GS
GS
DS
GS
GS
GS
DD
C
D
=2.5A, V
=2.5A, V
=250µA, V
=25°C
=78 Ω
=V
=400V, V
=V
=+30V, V
=-30V, V
=10V, I
=0V, V
=10V, V
=200V, I
GS
GS
TEST CONDITIONS
, I
, I
GS
GS
D
D
DS
D
=250µA
=250µA
DS
=1.25A
D
GS
DS
=0V
=0V, dI/dt=100A/µs
=25V, f=1.0MHz
GS
DS
=2.5A, R
=320V, I
=0V
=0V
=0V
=0V
RATINGS
RATINGS
-55 ~ 150
62.5
400
±30
100
150
G
D
2.5
0.2
25
=24Ω,
2
7
5
=2.5A
Power MOSFET
MIN TYP MAX UNIT
400
2.0
0.45
+10 +200 nA
240
200
-10 -200
3.0
2.0
44
26
20
10
25
46
25
1
2
8
QW-R502-524.b
4.0
3.4
2.5
1.2
25
25
12
10
3
UNIT
W/°C
UNIT
°C/W
°C/W
2 of 5
mJ
°C
°C
W
V
V
A
A
A
V/°C
µA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
A
A
V