2SA1577W BILIN [Galaxy Semi-Conductor Holdings Limited], 2SA1577W Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
2SA1577W
Manufacturer Part Number
2SA1577W
Description
PNP Silicon Epitaxial Planar Transistor
Manufacturer
BILIN [Galaxy Semi-Conductor Holdings Limited]
Datasheet
1.2SA1577W.pdf
(3 pages)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Rank
Range
marking
BL
ELECTRICAL CHARACTERISTICS
CLASSIFICANTION OF h
Document number: BL/SSSTF030
Rev.A
PNP Silicon Epitaxial Planar Transistor
Galaxy Electrical
P
82-180
HP
FE
Symbol
V
V
V
I
I
h
V
f
C
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
ob
Test conditions
I
I
V
V
V
V
f=100MHz
V
C
E
I
I
CB
EB
CE
CE
CB
=-100μA,I
=-100μA,I
C
C
@ Ta=25℃ unless otherwise specified
=-1mA,I
=-100mA, I
=-20V,I
=-4V,I
=-3V,I
=-5V, I
=-10V,I
C
C
C
=0
=-10mA
E
B
E
Q
120-270
HQ
= -20mA
C
E
=0
=0
=0,f=1MHz
=0
=0
B
=-10mA
MIN
-40
-32
-5
82
200
Production specification
2SA1577W
TYP
7
www.galaxycn.com
R
180-390
HR
MAX
390
-0.4
-1
-1
UNIT
V
V
V
μA
μA
V
MHz
pF
2