BFP26 SIEMENS [Siemens Semiconductor Group], BFP26 Datasheet
BFP26
Manufacturer Part Number
BFP26
Description
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1.BFP26.pdf
(4 pages)
Type
BFP 23
BFP 26
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - case
1)
2)
PNP Silicon Transistors
with High Reverse Voltage
For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm 25 mm 0.5 mm.
High breakdown voltage
Low collector-emitter saturation voltage
Low capacitance
Complementary types: BFP 22, BFP 25 (NPN)
2)
Marking
–
C
= 66 ˚C
Ordering Code
(tape and reel)
Q62702-F622
Q62702-F722
Symbol
V
V
V
I
I
I
I
P
T
T
R
R
C
CM
B
BM
j
stg
CE0
CB0
EB0
tot
th JA
th JC
BFP 23
200
200
Pin Configuration
E
1
– 65 … + 150
Values
B
200
500
100
200
625
150
2
200
135
6
BFP 26
300
300
C
3
3
2
Package
TO-92
Unit
V
mA
mW
˚C
K/W
1
BFP 23
BFP 26
1)
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BFP26 Summary of contents
Page 1
PNP Silicon Transistors with High Reverse Voltage High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BFP 22, BFP 25 (NPN) Type Marking BFP 23 – BFP 26 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector ...
Page 2
Electrical Characteristics ˚C, unless otherwise specified. A Parameter DC characteristics Collector-emitter breakdown voltage = Collector-base breakdown voltage = 100 Emitter-base breakdown voltage I = 100 A E Collector-base cutoff ...
Page 3
Total power dissipation tot Permissible pulse load thJA ; T ) Operating range ˚ Collector current ...
Page 4
Collector cutoff current CB0 V = 160 V, 250 V CB Transition frequency MHz current gain ...