PN2907A-AB3-R UTC [Unisonic Technologies], PN2907A-AB3-R Datasheet - Page 2

• Manufacturer Part Number: PN2907A-AB3-R
• Description: PNP GENERAL PURPOSE AMPLIFIER
• Manufacturer: UTC [Unisonic Technologies]

PN2907A
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation
Junction Temperature
Storage Temperature
Note: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
(Note)
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain – Bandwidth Product
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
Note: Pulse Test: Pulse Width ≤ 300ms, Duty Cycle≤2.0%
Thermal resistance, junction to Ambient
ELECTRICAL CHARACTERISTICS
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
ABSOLUTE MAXIUM RATINGS
THERMAL DATA
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
cycle operations.
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
SYMBOL
V
V
BV
BV
BV
CE(SAT)
BE(SAT)
I
I
t
t
h
C
C
t
CBO
CEX
DLY
OFF
t
t
I
f
ON
t
FE
CEO
CBO
B
T
R
S
F
EBO
ob
ib
(Ta=25°C, unless otherwise specified.)
(Ta=25°C, unless otherwise specified.)
SOT-89
TO-92
I
I
I
V
V
V
V
Ic=-0.1mA, V
Ic=-1.0 mA, V
Ic=-10 mA, V
Ic=-150 mA, V
Ic=-500 mA, V
Ic=-150mA, I
Ic=-500mA, I
Ic=-150mA, I
Ic=-500mA, I
Ic=-50mA, V
V
V
Vcc=-30V, Ic=-150mA
I
Vcc=-6V, Ic=-150mA
I
C
C
E
B1
B1
CB
CE
CB
CB
CB
EB
SOT-89
=-10μA , I
=-10mA, I
=-10μA, I
TO-92
=-15mA
=I
=-2V, I
=-30V, V
=-30V, V
=-50V, I
=-50V, I
=-10V, I
B2
TEST CONDITIONS
=-15mA
C
E
=0, f=100kHz
B
C
E
E
E
=0
SYMBOL
SYMBOL
EB
BE
=0
=0
=0, Ta=150°C
CE
=0, f=100kHz
=0
B
B
B
B
CE
CE
CE
=-15mA
=-50mA
=-15mA (Note)
=-50mA
CE
CE
V
V
=-0.5V
=-0.5V
=-20V, f=100MHz
V
T
=-10V
=-10V
θ
P
=-10V
T
CEO
CBO
EBO
I
STG
=-10V (Note)
=-10V (Note)
JA
C
D
J
PNP SILICON TRANSISTOR
-40 ~ +150
RATINGS
RATINGS
+150
-800
350
625
MIN
-60
-60
100
100
100
200
-60
-60
-5
75
50
-5
104
200
TYP
-0.02
MAX
-0.4
-1.6
-1.3
-2.6
300
100
-50
-50
-20
30
45
10
40
80
30
8
QW-R201-041.D
UNIT
mW
mW
mA
°C
°C
UNIT
℃/W
℃/W
V
V
V
UNIT
MHz
μA
μA
nA
nA
pF
pF
ns
ns
ns
ns
ns
ns
2 of 6
V
V
V
V
V
V
V