PN2222A-AB3-T UTC [Unisonic Technologies], PN2222A-AB3-T Datasheet - Page 2

• Manufacturer Part Number: PN2222A-AB3-T
• Description: NPN GENERAL PURPOSE AMPLIFIER
• Manufacturer: UTC [Unisonic Technologies]

PN2222A
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Base Cut-Off Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
Collector Base Time Constant
Noise Figure
Real Part of Common-Emitter High
Frequency Input Impedance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Thermal resistance, junction to Ambient
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATING
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
THERMAL DATA
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
cycle operations.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
PARAMETER
(Ta=25℃, unless otherwise noted)
SYMBOL
V
V
Re(hje) I
BV
BV
BV
Cobo
rb'Cc
CE(SAT)
BE(SAT)
Cibo
I
I
I
h
NF
CEO
CBO
EBO
I
f
BL
FE
CBO
CEO
T
EBO
(Ta=25℃, unless otherwise specified)
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
f=1.0kHz
(Ta=25℃, unless otherwise specified)
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CE
CB
CB
EB
CE
CB
EB
=10µA, I
=10mA, I
=10µA, I
=0.1mA, V
=1.0mA, V
=10mA, V
=10mA, V
=150mA, V
=150mA, V
=500mA, V
=150mA, I
=500mA, I
=150mA, I
=500mA, I
=20mA, V
=20mA, V
=100µA, V
=20mA, V
SOT-89
SOT-89
TO-92
TO-92
=3.0V, I
=0.5V, I
=60V, V
=60V, I
=60V,I
=60V, V
=10V, I
TEST CONDITIONS
C
E
E
B
E
E
=0
=0
=0, Ta=150℃
C
C
EB(OFF
EB(OFF)
CE
CE
CE
CB
CB
=0
=0
=0, f=100kHz
B
B
B
B
CE
CE
CE
=0
=0, f=100kHz
SYMBOL
SYMBOL
CE
CE
CE
=15mA
=50mA
=15mA
=50mA
=10V
=10V, Ta=-55℃
=20V, f=100MHz
=20V, f=31.8MHz
=20V, f=300MHz
=10V
=10V
=10V, R
V
V
V
=10V*
=1.0V*
=10V*
T
θ
P
T
CBO
CEO
EBO
I
STG
JA
C
)=3.0V
C
J
=3.0V
S
=1.0kΩ,
NPN SILICON TRANSISTOR
-55 ~ +150
RATINGS
RATINGS
MIN
100
300
0.6
75
40
35
50
75
35
50
40
6
+150
625
104
200
0.6
1.2
75
40
6
TYP
MAX
0.01
300
150
0.3
1.0
1.2
2.0
8.0
4.0
10
10
10
20
25
60
QW-R208-022,B
UNIT
UNIT
℃/W
℃/W
mW
℃
℃
W
UNIT
2 of 6
V
V
V
A
MHz
nA
µA
µA
nA
nA
pS
dB
pF
pF
Ω
V
V
V
V
V
V
V