FDMC2523P_12 FAIRCHILD [Fairchild Semiconductor], FDMC2523P_12 Datasheet
FDMC2523P_12
Manufacturer Part Number
FDMC2523P_12
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDMC2523P_12.pdf
(7 pages)
©2012 Fairchild Semiconductor Corporation
FDMC2523P Rev.C3
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC2523P
P-Channel QFET
-150V, -3A, 1.5Ω
Features
V
V
I
P
T
T
dv/dt
R
R
D
J
L
DS
GS
D
θJC
θJA
Max r
Low Crss ( typical 10pF)
Fast Switching
Low gate charge ( typical 6.2 nC )
Improved dv / dt capability
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC2523P
DS(on)
= 1.5Ω at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation (Steady State)
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Peak Diode Recovery dv/dt
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
MLP 3.3x3.3
= -10V, I
FDMC2523P
-Continuous
-Pulsed
Device
D
®
= -1.5A
Pin 1
T
A
= 25°C unless otherwise noted
S
S
Parameter
T
T
T
S
C
C
C
MLP 3.3x3.3
= 25°C
G
= 100°C
= 25°C
Package
Bottom
1
D
General Description
These P-Channel MOSFET enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices
are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC
motor control.
Application
D
Active Clamp Switch
D
D
Reel Size
13 ’’
S
S
S
G
(Note 1a)
(Note 1)
(Note 2)
Tape Width
12 mm
-55 to +150
Ratings
-150
±30
-1.8
300
-12
3.0
42
60
-3
-5
November 2012
www.fairchildsemi.com
3000 units
Quantity
D
D
D
D
Units
°C/W
V/ns
°C
°C
W
V
V
A
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FDMC2523P_12 Summary of contents
Page 1
FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features Max r = 1.5Ω -10V, I DS(on) GS Low Crss ( typical 10pF) Fast Switching Low gate charge ( typical 6 Improved capability RoHS Compliant ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...
Page 3
Typical Characteristics 3 -10V GS PULSE DURATION = 300 DUTY CYCLE = 2.0%MAX 2 - -9V GS 1.5 1.0 0.5 0 DRAIN TO SOURCE VOLTAGE (V) DS ...
Page 4
Typical Characteristics - GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 125 0 ...
Page 5
Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 1E FDMC2523P Rev. 25°C unless otherwise noted J SINGLE PULSE 135 C/W θ JA ...
Page 6
Dimensional Outline and Pad Layout FDMC2523P Rev.C3 6 www.fairchildsemi.com ...
Page 7
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ F-PFS™ ® AccuPower™ FRFET AX-CAP™* Global Power ...