ZVN4206V ZETEX [Zetex Semiconductors], ZVN4206V Datasheet - Page 4

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ZVN4206V

Manufacturer Part Number
ZVN4206V
Description
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
ZVN4206GV
1000
160
900
200
120
80
40
Maximum repetative avalanche energy
800
700
600
500
400
300
200
100
0
Capacitance v drain-source voltage
0
Transconductance v drain current
0
0
10
1
v Junction Temperature
I
V
T
D
j
DS
2
- Drain Current (Amps)
- Junction Temperature (°C)
20
-Drain Source Voltage (Volts)
3
V
DS=
30
4
TYPICAL CHARACTERISTICS
10V
40
5
50
6
7
60
C
C
C
8
iss
oss
rss
70
9
10
80
Maximum repetative avalanche current
Transconductance v gate-source voltage
1000
900
800
700
600
500
400
300
200
100
14
12
10
16
0
8
6
4
2
0
Gate charge v gate-source voltage
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
v Junction Temperature
1
T
j
V
I
- Junction Temperature (°C)
D=
2
GS
1.5A
-Gate Source Voltage (Volts)
3
Q-Charge (nC)
4
V
DS=
V
5
DS
20V
10V
=
6
40V 60V
7
8
9
10

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