FDMC8676_07 FAIRCHILD [Fairchild Semiconductor], FDMC8676_07 Datasheet

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FDMC8676_07

Manufacturer Part Number
FDMC8676_07
Description
N-Channel PowerTrench MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
©2007 Fairchild Semiconductor Corporation
FDMC8676 Rev.C
FDMC8676
N-Channel PowerTrench
30V, 18A, 5.9mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
E
T
R
R
D
DS
GS
D
AS
J
θJC
θJA
Max r
Max r
Low Profile - 1mm max in Power 33
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC8676
DS(on)
DS(on)
= 5.9mΩ at V
= 9.3mΩ at V
Bottom
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
= 10V, I
= 4.5V, I
FDMC8676
-Continuous
Power 33
-Continuous (Silicon limited)
-Pulsed
Device
D
D
= 14.7A
= 11.5A
T
D
A
®
= 25°C unless otherwise noted
D
MOSFET
Parameter
D
D
Top
Power 33
Package
S
1
S
T
T
T
T
T
Pin 1
S
General Description
This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low r
provide an extremely versatile device.
A
C
C
A
C
Applications
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
High efficiency DC-DC converter
Notebook DC-DC conversion
Multi purpose point of load
G
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 3)
7
8
5
6
Tape Width
DS(on)
12mm
-55 to +150
Ratings
has been maintained to
±20
216
2.3
30
18
66
16
60
41
53
3
December 2007
www.fairchildsemi.com
4
1
3
2
3000units
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A
tm

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FDMC8676_07 Summary of contents

Page 1

FDMC8676 N-Channel PowerTrench 30V, 18A, 5.9mΩ Features Max r = 5.9mΩ 10V, I DS(on) GS Max r = 9.3mΩ 4.5V, I DS(on) GS Low Profile - 1mm max in Power 33 RoHS Compliant Bottom ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...

Page 3

Typical Characteristics 10V 4. PULSE DURATION = 300 10 DUTY CYCLE = 2%MAX 0 0.0 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure ...

Page 4

Typical Characteristics 14. 15V GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 125 J 1 0.01 0.1 ...

Page 5

Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev 25°C unless otherwise noted J SINGLE PULSE o R ...

Page 6

Dimensional Outline and Pad Layout ©2007 Fairchild Semiconductor Corporation FDMC8676 Rev.C 6 www.fairchildsemi.com ...

Page 7

TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ ...

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