FDMC8878_12 FAIRCHILD [Fairchild Semiconductor], FDMC8878_12 Datasheet

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FDMC8878_12

Manufacturer Part Number
FDMC8878_12
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDMC8878_12.pdf (7 pages)
©2012 Fairchild Semiconductor Corporation
FDMC8878 Rev.D4
FDMC8878
N-Channel Power Trench
30V, 16.5A, 14m:
Features
„ Max r
„ Max r
„ Low Profile - 0.8
„ RoHS Compliant
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
TJC
TJA
, T
Symbol
Device Marking
STG
FDMC8878
DS(on)
DS(on)
1 2 3 4
8
= 14m: at V
= 17m: at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
7
mm max in MLP 3.3X3.3
6
5
GS
GS
= 10V, I
= 4.5V, I
MLP 3.3x3.3
FDMC8878
-Continuous (Silicon limited)
-Continuous
-Pulsed
Device
D
D
= 9.6A
= 8.7A
T
A
G
= 25°C unless otherwise noted
S
Parameter
D D D D
Bottom
S
MLP 3.3X3.3
®
S
Package
MOSFET
Pin 1
1
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications.
Application
„ DC - DC Conversion
T
T
T
T
T
C
C
A
A
C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
Reel Size
Semiconductor‘s
13 ”
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
5
6
7
8
Tape Width
advanced
12 mm
-55 to +150
Ratings
16.5
±20
9.6
2.1
30
38
60
31
60
4
Power
July 2012
www.fairchildsemi.com
3000 units
Quantity
4
3
2
1
G
S
S
S
Trench
Units
°C/W
°C
W
V
V
A

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FDMC8878_12 Summary of contents

Page 1

FDMC8878 N-Channel Power Trench 30V, 16.5A, 14m: Features „ Max r = 14m 10V, I DS(on) GS „ Max r = 17m 4.5V, I DS(on) GS „ Low Profile - 0.8 mm max in ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS 'BV Breakdown Voltage Temperature DSS 'T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...

Page 3

Typical Characteristics 10V 4. DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 1 9.6A ...

Page 4

Typical Characteristics 9. 10V GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 125 0.01 ...

Page 5

Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.003 - ©2012 Fairchild Semiconductor Corporation FDMC8878 Rev 25°C unless otherwise noted ...

Page 6

Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation D4 FDMC8878 Rev. 6 www.fairchildsemi.com ...

Page 7

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ F-PFS™ ® AccuPower™ FRFET AX-CAP™* Global Power ...

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