FDMC8884_12 FAIRCHILD [Fairchild Semiconductor], FDMC8884_12 Datasheet
FDMC8884_12
Manufacturer Part Number
FDMC8884_12
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDMC8884_12.pdf
(7 pages)
©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
FDMC8884
N-Channel Power Trench
30 V, 15 A, 19 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC8884
DS(on)
DS(on)
= 19 mΩ at V
= 30 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
= 10 V, I
= 4.5 V, I
MLP 3.3x3.3
FDMC8884
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
= 9.0 A
= 7.2 A
Pin 1
T
A
®
= 25 °C unless otherwise noted
DS(on)
S
Parameter
MOSFET
S
S
MLP 3.3x3.3
G
Package
Bottom
1
T
T
T
T
T
General Description
This
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
D
A
C
C
A
C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
D
= 25 °C
D
N-Channel
D
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
D
D
D
MOSFET
8
5
6
7
Tape Width
12 mm
is produced using Fairchild
-55 to +150
Ratings
±20
6.6
9.0
2.3
53
30
15
24
40
24
18
®
process that has
www.fairchildsemi.com
April 2012
3000 units
Quantity
1
4
3
2
G
S
S
Units
S
°C/W
mJ
°C
W
V
V
A
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FDMC8884_12 Summary of contents
Page 1
FDMC8884 N-Channel Power Trench mΩ Features Max mΩ DS(on) GS Max mΩ 4 DS(on) GS High performance technology ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...
Page 3
Typical Characteristics PULSE DURATION = 80 GS DUTY CYCLE = 0.5% MAX 4 DRAIN TO SOURCE VOLTAGE (V) ...
Page 4
Typical Characteristics 9 15V GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics ...
Page 5
Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE R = 125 θ JA 0.001 - ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev. °C unless ...
Page 6
Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E3 6 www.fairchildsemi.com ...
Page 7
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ F-PFS™ ® AccuPower™ FRFET AX-CAP™* Global Power ...