FDMC89521L FAIRCHILD [Fairchild Semiconductor], FDMC89521L Datasheet
FDMC89521L
Manufacturer Part Number
FDMC89521L
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDMC89521L.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC89521L
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2012 Fairchild Semiconductor Corporation
FDMC89521L Rev. C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC89521L
Dual N-Channel PowerTrench
60 V, 8.2 A, 17 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJA
θJA
, T
Max r
Max r
Termination is Lead-free
RoHS Compliant
Symbol
Device Marking
STG
FDMC89521L
DS(on)
DS(on)
= 17 mΩ at V
= 27 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
GS
GS
Power 33
FDMC89521L
= 10 V, I
= 4.5 V, I
-Pulsed
Pin 1
Device
G2
D
D
= 8.2 A
S2
= 6.7 A
G1
T
D2
A
S2
D1
S1
= 25 °C unless otherwise noted
Parameter
S2
S1
S1
®
Power 33
Package
MOSFET
T
T
T
1
A
A
A
= 25 °C
= 25 °C
= 25 °C
General Description
This device includes two 60 V N-Channel MOSFETs in a dual
Power 33 (3 mm X 3 mm MLP) package. The package is
enhanced for exceptional thermal performance.
Applications
Battery Protection
Load Switching
Bridge Topologies
Reel Size
G1
S1
S1
S1
13 ’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 3)
)
Tape Width
12 mm
-55 to +150
Ratings
±20
155
8.2
1.9
0.8
60
40
32
65
www.fairchildsemi.com
August 2012
3000 units
Quantity
S2
G2
S2
S2
Units
°C/W
mJ
°C
W
V
V
A
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