ZXMC3A18DN8_05 ZETEX [Zetex Semiconductors], ZXMC3A18DN8_05 Datasheet

no-image

ZXMC3A18DN8_05

Manufacturer Part Number
ZXMC3A18DN8_05
Description
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel = V
P-Channel = V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - MAY 2005
DEVICE
ZXMC3A18DN8TA
ZXMC3A18DN8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor Drive
LCD backlighting
ZXMC
3A18
(BR)DSS
(BR)DSS
REEL
SIZE
13”
= -30V : R
7”
= 30V : R
WIDTH
12mm
12mm
TAPE
DS
DS
(
(
on
on
QUANTITY
2500 units
PER REEL
500 units
)= 0.035 ; I
)= 0.025 ; I
1
D
D
= -6.3A
= 7.6A
Q1 = N-channel
ZXMC3A18DN8
S E M I C O N D U C T O R S
Q2 = P-channel
Top View

Related parts for ZXMC3A18DN8_05

ZXMC3A18DN8_05 Summary of contents

Page 1

COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V = 30V : R (BR)DSS P-Channel = V = -30V : R (BR)DSS DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of ...

Page 2

ZXMC3A18DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V = 10V; T =25° 10V; T =70° 10V; T =25° (c) Pulsed Drain Current Continuous Source Current ...

Page 3

ISSUE 1 - MAY 2005 ZXMC3A18DN8 CHARACTERISTICS ...

Page 4

ZXMC3A18DN8 N-Channel ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) ...

Page 5

ISSUE 1 - MAY 2005 TYPICAL CHARACTERISTICS 5 ZXMC3A18DN8 ...

Page 6

ZXMC3A18DN8 TYPICAL CHARACTERISTICS 6 ISSUE 1 - MAY 2005 ...

Page 7

P-Channel ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) ...

Page 8

ZXMC3A18DN8 PACKAGE OUTLINE Pin 1 Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimetres Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 ...

Related keywords