ZXMN2A04DN8_04 ZETEX [Zetex Semiconductors], ZXMN2A04DN8_04 Datasheet

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DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V = 20V 0.025 (BR)DSS DS(ON) DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This ...

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ZXMN2A04DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a) ...

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ISSUE 1 - JULY 2004 ZXMN2A04DN8 CHARACTERISTICS ...

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ZXMN2A04DN8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING ...

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ISSUE 1 - JULY 2004 TYPICAL CHARACTERISTICS 5 ZXMN2A04DN8 ...

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ZXMN2A04DN8 TYPICAL CHARACTERISTICS 6 ISSUE 1 - JULY 2004 ...

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PACKAGE OUTLINE D Pin 1 Seating Plane b e CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES © Zetex Semiconductors plc 2004 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraße 19 700 Veterans Memorial Hwy D-81673 München Hauppauge, NY 11788 Germany ...