ZXMN3A03E6_05 ZETEX [Zetex Semiconductors], ZXMN3A03E6_05 Datasheet
ZXMN3A03E6_05
Related parts for ZXMN3A03E6_05
ZXMN3A03E6_05 Summary of contents
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N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V = 30V 0.050 (BR)DSS DS(ON) DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes ...
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ZXMN3A03E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-source voltage Gate source voltage Continuous drain current V =10V =10V =10V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) (a) ...
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ISSUE 3 - OCTOBER 2005 CHARACTERISTICS 3 ZXMN3A03E6 ...
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ZXMN3A03E6 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1)(3) Forward transconductance (3) DYNAMIC Input capacitance Output capacitance Reverse transfer capacitance (2) (3) SWITCHING Turn-on delay time ...
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ISSUE 3 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXMN3A03E6 ...
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ZXMN3A03E6 TYPICAL CHARACTERISTICS 6 ISSUE 3 - OCTOBER 2005 ...
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PACKAGE OUTLINE CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 ...