ZXM61P02F_04 ZETEX [Zetex Semiconductors], ZXM61P02F_04 Datasheet

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ZXM61P02F_04

Manufacturer Part Number
ZXM61P02F_04
Description
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - JUNE 2004
DEVICE
ZXM61P02FTA
ZXM61P02FTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
P02
=-20V; R
REEL SIZE
(inches)
DS(ON)
13
7
=0.60
TAPE WIDTH (mm)
8mm embossed
8mm embossed
I
D
=-0.9A
1
QUANTITY
PER REEL
10000 units
3000 units
ZXM61P02F
SOT23
Top View

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ZXM61P02F_04 Summary of contents

Page 1

P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.60 (BR)DSS DS(ON) DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ...

Page 2

ZXM61P02F ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T =25°C ...

Page 3

Refer Note ( 100m 100ms 10ms 1ms 10m 0 Drain-Source Voltage (V) DS Safe Operating Area 180 Refer Note (b) 160 140 120 100 D=0 D=0.2 D=0.1 20 Single Pulse ...

Page 4

ZXM61P02F ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

Drain-Source Voltage (V) DS Output Characteristics 10 T=+150°C T=+25°C 1 100m 10m 1.5 2.5 -VGS - Gate-Source Voltage (V) Typical Transfer Characteristics 10 Vg=-2.5V Vg=-4.5V 1 100m 0.1 1 ...

Page 6

ZXM61P02F 350 300 250 200 150 100 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms ISSUE 1 - JUNE 2004 TYPICAL CHARACTERISTICS 5 Vgs=0V f=1MHz 4 ...

Page 7

ZXM61P02F PACKAGE DIMENSIONS DIM Millimetres Min Max A 2.67 3.05 B 1.20 1.40 C – 1.10 D 0.37 0.53 F 0.085 0.15 G NOM 1.9 K 0.01 0.10 L 2.10 2.50 N NOM 0.95 Zetex plc. Fields New Road, Chadderton, ...

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