ZXM62N02E6_04 ZETEX [Zetex Semiconductors], ZXM62N02E6_04 Datasheet
ZXM62N02E6_04
Related parts for ZXM62N02E6_04
ZXM62N02E6_04 Summary of contents
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N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V 0.1 (BR)DSS DS(ON) DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes ...
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ZXM62N02E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation at T ...
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Refer Note ( 100ms 10ms 1ms 100us 0.1 0 Drain-Source Voltage (V) DS Safe Operating Area 80 Refer Note ( D=0.5 20 D=0.2 D=0.1 D=0.05 Single Pulse 0 0.0001 0.001 ...
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ZXM62N02E6 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay ...
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C 5V 4. 0.1 0 Drain-Source Voltage (V) DS Output Characteristics 100 V =10V DS 10 T=150°C T=25°C 1 0.1 1 1 Gate-Source Voltage (V) GS Typical ...
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ZXM62N02E6 TYPICAL CHARACTERISTICS 900 800 700 600 500 400 300 200 100 0 0 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms ISSUE 1 - JUNE 2004 5 I ...
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ZXM62N02E6 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min A 0.90 1.45 0.35 A1 0.00 0. 0.90 1.30 0.035 b 0.35 0.50 0.014 C 0.09 0.20 0.0035 D 2.80 3.00 ...