ZXM62N03E6_04 ZETEX [Zetex Semiconductors], ZXM62N03E6_04 Datasheet - Page 2

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ZXM62N03E6_04

Manufacturer Part Number
ZXM62N03E6_04
Description
30V N-CHANNEL ENHANCEMENTMODEMOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ZXM62N03E6
ISSUE 1 - JUNE 2004
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
A
=25°C (a)
=25°C (b)
(V
GS
GS
=10V; T
=10V; T
A
A
=70°C)(b)
=25°C)(b)
SYMBOL
V
V
I
I
I
I
P
P
T
D
DM
S
SM
SYMBOL
R
R
2
D
D
j
DSS
GS
:T
θJA
θJA
stg
-55 to +150
VALUE
LIMIT
13.6
113
3.2
2.6
2.1
1.1
8.8
1.7
30
18
18
73
20
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
W
W
°C
A
A
A
A
V
V

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